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  4. A dip coating process for large area silicon-doped high performance hematite photoanodes
 
research article

A dip coating process for large area silicon-doped high performance hematite photoanodes

Hu, Yelin
•
Bora, Debajeet K.
•
Boudoire, Florent
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2013
Journal Of Renewable And Sustainable Energy

A facile and low-cost dip-coating process for the deposition of silicon doped hematite films (Si:alpha-Fe2O3) for hydrogen production by solar water splitting in photo-electrochemical cells (PEC) is presented. The precursors include iron nitrate, oleic acid, tetraethyl orthosilicate (TEOS) and tetrahydrofuran as dispersion agent. Sequential dip coating on transparent conducting oxides glass substrates with heat treatment steps at 500 degrees C and 760 degrees C yields mesoporous Si:alpha-Fe2O3 with a roughness factor of 17 and photocurrent densities >1 mA/cm(2) at 1.23 V vs. reversible hydrogen electrode with SiOx underlayer and surface modification. A PEC demonstrator with 80 cm(2) active area in 1 M potassium hydroxide yields a photocurrent of 35 mA at 1.5 AM irradiation with the corresponding hydrogen evolution at a Pt wire counter electrode. (C) 2013 AIP Publishing LLC.

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Type
research article
DOI
10.1063/1.4812831
Web of Science ID

WOS:000323945600034

Author(s)
Hu, Yelin
Bora, Debajeet K.
Boudoire, Florent
Haeussler, Florian
Graetzel, Michael  
Constable, Edwin C.
Braun, Artur
Date Issued

2013

Publisher

Amer Inst Physics

Published in
Journal Of Renewable And Sustainable Energy
Volume

5

Issue

4

4

Article Number

043109

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPI  
Available on Infoscience
November 4, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/96712
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