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research article

Low temperature resistivity, thermoelectricity, and power factor of Nb doped anatase TiO2

Jacimovic, J.  
•
Gaal, R.  
•
Magrez, A.  
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2013
Applied Physics Letters

The resistivity of a very high quality anatase TiO2 doped with 6% of Nb was measured from 300K down to 40 mK. No sign of superconductivity was detected. Instead, a minute quantity of cation vacancies resulted in a Kondo scattering. Measurements of thermo-electric power and resistivity were extended up to 600 K. The calculated power factor has a peak value of 14 mu W/(K(2)cm) at 350 K, which is comparable to that of Bi2Te3 [Venkatasubramanian et al., Nature 413, 597 (2001)], the archetype thermolectrics. Taking the literature value for the thermal conductivity of Nb doped TiO2 thin films, the calculated figure of merit (ZT) is in the range of 0.1 above 300 K. This value is encouraging for further engineering of the material in order to reach ZT of 1 suitable for high temperature thermoelectrics. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773517]

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Type
research article
DOI
10.1063/1.4773517
Web of Science ID

WOS:000313646500135

Author(s)
Jacimovic, J.  
•
Gaal, R.  
•
Magrez, A.  
•
Piatek, J.
•
Forro, L.  
•
Nakao, S.
•
Hirose, Y.
•
Hasegawa, T.
Date Issued

2013

Publisher

Amer Inst Physics

Published in
Applied Physics Letters
Volume

102

Issue

1

Article Number

013901

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPMC  
Available on Infoscience
March 28, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/90904
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