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  4. Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets
 
conference paper

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Corfdir, Pierre  
•
Simeonov, Dobri
•
Feltin, Eric
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2011
Physica Status Solidi (c) Special Issue: 10th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 10) • International Workshop Beam Injection Assessment of Microstructures in Semicondutors (BIAMS 2010)
International Workshop Beam Injection Assessment of Microstructures in Semicondutors (BIAMS)

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising monolithic white light emitters. Here, we show that in order to achieve solar-like white light emission from this kind of structure, one has to pay attention on the respective evolutions of radiative and non-radiative QW exciton decay times along the (11-22) facets.

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Type
conference paper
DOI
10.1002/pssc.201084005
Web of Science ID

WOS:000301542900067

Author(s)
Corfdir, Pierre  
Simeonov, Dobri
Feltin, Eric
Carlin, Jean-François  
Lefebvre, Pierre
Grandjean, Nicolas
Deveaud-Plédran, Benoît  
Ganière, Jean-Daniel  
Date Issued

2011

Publisher

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa

Published in
Physica Status Solidi (c) Special Issue: 10th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 10) • International Workshop Beam Injection Assessment of Microstructures in Semicondutors (BIAMS 2010)
Series title/Series vol.

Physica Status Solidi C-Current Topics in Solid State Physics

Volume

8

Issue

4

Start page

1394

End page

1397

Subjects

nGaN

•

time-resolved cathodoluminescence

•

envelope function calculations

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOEQ  
Event nameEvent placeEvent date
International Workshop Beam Injection Assessment of Microstructures in Semicondutors (BIAMS)

Haller, Germany

July 4-8, 2010

Available on Infoscience
May 2, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/66958
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