A numerical study of the influence of disorder in semiconductors on spin-Rabi nutation observed with pulsed electrically or optically detected magnetic-resonance techniques (pEDMR and pODMR, respectively) is presented. It is shown that transient nutation signals of disordered spin ensembles differ from ordered ensembles as inhomogeneously broadened Lande-factor distributions are presented. In contrast to ordered systems, the magnitudes of spin-Rabi nutation and spin-Rabi beat nutation change significantly with a strong dependence of their ratio on the correlation of the Lande factors within the nearest-neighbor spin pairs. An interpretation of these results is given and their application for the investigation of disorder using pEDMR and pODMR is discussed.