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conference paper

A circuit-level substrate current model for smart-power ICs

Lo Conte, F.  
•
Sallese, Jean-Michel  
•
Pastre, M.  
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2009
2009 Ieee Energy Conversion Congress And Exposition, Vols 1-6
Energy Conversion Congress and Exposition (ECCE), 2009

This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The model is based on a new compact model of basic components (PN junction and resistance) and takes into account minority carriers at the boundary. An equivalent circuit schematic of the substrate is built by identifying these basic elements in the substrate and interconnecting them. Parasitic effects such as bipolar or latch-up result from the continuity of minority carriers guaranteed by the components' model. A structure similar to a half-bridge perturbing sensitive N-well has been simulated. It is composed by four PN junctions connected together by their common P-doped sides. The results are in good agreement with those obtained from physical device simulations. © 2009 IEEE.

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Type
conference paper
DOI
10.1109/ECCE.2009.5316405
Web of Science ID

WOS:000279630101237

Author(s)
Lo Conte, F.  
Sallese, Jean-Michel  
Pastre, M.  
Krummenacher, F.  
Kayal, M.  
Date Issued

2009

Publisher

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa

Published in
2009 Ieee Energy Conversion Congress And Exposition, Vols 1-6
ISBN of the book

978-142442893-9

978-1-4244-2892-2

Start page

3657

End page

3662

Subjects

Integrated circuit

•

Lumped modeling

•

Methodology modeling

•

Noise

•

Parasitic coupling

•

Power parasitic modeling

•

Power semiconductor devices

•

Smart power IC

•

Substrate modeling

Note

Electronic Laboratory (elab.epfl.ch), EPFL, 1015 Lausanne, Switzerland, Export Date: 19 January 2010, Source: Scopus, Art. No.: 5316405, References: Murari, B., Bertotti, F., Vignola, G., (2002) Smart Power ICs, pp. 218-220. , 2nd Edition, pp, Springer-Verlag, Berlin; Schenkel, M., (2003) Substrate Current Effects in Smart Power ICs, , Hartung-Gorre-Verlag, ISBN 3-89649-848-7; Oehmen, J., Olbrich, M., Hedrich, L., Barke, E., Modeling Lateral Parasitic Transistors in Smart Power ICs (2006) IEEE Trans. on Device and Materials Reliability, 6 (3), pp. 408-420. , September; Saez, R., Kayal, M., Declercq, M., Schneider, M., Design guidelines for CMOS current steering logic (1997) Proc. ISCAS'97; Casalta, J.M., Aragons, X., Rubio, A., Substrate Coupling Evaluation in BiCMOS Technology (1997) IEEE Journal of Solid-State Circuits, 32 (4), pp. 568-603. , April; Clement, F.J.R., Zysman, E., Kayal, M., Declercq, M., Toward a global solution for parasitic coupling modeling and visualization (1994) Custom Integrated Circuits Conference, pp. 537-540. , LAYIN; Birrer, P., Fiez, T.S., Mayaram, K., (2004) Silencer!: A tool for substrate noise coupling analysis, SOC Conference, pp. 105-108; Lo Conte, F., Pastre, M., Sallese, J.M., Krummenacher, F., Kayal, M., (2008) Substrate Current Modeling for High-Voltage Smart Power BCD Technology, IEEE NEWCAST-TAISA, pp. 141-144. , June; Sze, S.M., (1981) Physics of Semiconductor Device, , 2nd Edition, Wiley

URL

URL

http://tinyurl.com/25xnf66
Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
GR-KA  
EDLAB  
Event nameEvent placeEvent date
Energy Conversion Congress and Exposition (ECCE), 2009

San Jose, CA, USA

September 20-24, 2009

Available on Infoscience
October 21, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55893
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