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research article

FD SOI Hall sensor electronics interfaces for energy measurement

Blagojevic, M.
•
Kayal, M.  
•
De Venuto, D.
2006
Microelectronics Journal

This paper presents a SOI Hall sensor based microsystem for energy measurement. The mixed-mode signal circuitry has been entirely designed and integrated in the experimental 0.5 mu m fully depleted SOI 3 V technology. It consists of an integrated Hall element, chopper stabilized sensor bias system, analog front end and digital back end. Aiming at performing accurate measurements, we have implemented a high linearity analog front end, as well as a high-resolution analog-to-digital conversion technique. Two versions of the microsystem have been realized. The first test chip contains a classical instrumentation amplifier as sensor amplifier, whereas the second one contains a linearized differential-difference amplifier as sensor amplifier. Both microsystems are fully functional and permits one to perform the measurements with an overall system error that is less than 1.5%. (c) 2006 Elsevier Ltd. All rights reserved.

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Type
research article
DOI
10.1016/j.mejo.2006.04.015
Web of Science ID

WOS:000242907400034

Author(s)
Blagojevic, M.
Kayal, M.  
De Venuto, D.
Date Issued

2006

Published in
Microelectronics Journal
Volume

37

Issue

12

Start page

1576

End page

1583

Note

6th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2006)

Apr 03-05, 2006

Univ Nottingham, Nottingham, ENGLAND

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

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GR-KA  
Available on Infoscience
October 21, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55887
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