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research article

Room-temperature polariton lasing in semiconductor microcavities

Christopoulos, S.
•
von Hogersthal, G. B. H.
•
Grundy, A. J. D.
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2007
Physical Review Letters

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29 mu J cm(-2), 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of +/- 5 degrees and spatial size around 5 mu m.

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Type
research article
DOI
10.1103/PhysRevLett.98.126405
Web of Science ID

WOS:000245135400043

Author(s)
Christopoulos, S.
von Hogersthal, G. B. H.
Grundy, A. J. D.
Lagoudakis, P. G.
Kavokin, A. V.
Baumberg, J. J.
Christmann, G.
Butte, R.  
Feltin, E.
Carlin, J. F.  
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Date Issued

2007

Published in
Physical Review Letters
Volume

98

Issue

12

Article Number

6405

Subjects

SPONTANEOUS-EMISSION

•

CONTINUOUS-WAVE

•

GAN

•

LASERS

•

EXCITATION

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55055
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