Room-temperature polariton lasing in semiconductor microcavities
We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29 mu J cm(-2), 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of +/- 5 degrees and spatial size around 5 mu m.
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Christopoulos, S., von Hogersthal, G. B. H., Grundy, A. J. D., Lagoudakis, P. G., Kavokin, A. V., Baumberg, J. J., Christmann, G., Butte, R., Feltin, E., Carlin, J. F., & Grandjean, N. (2007). Room-temperature polariton lasing in semiconductor microcavities. Physical Review Letters, 98(12), Article 6405. https://doi.org/10.1103/PhysRevLett.98.126405
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WOS:000245135400043
2007
98
12
6405
REVIEWED
EPFL