research article
Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field
Wurtzite AlGaN/GaN quantum well (QW) structures were grown by molecular beam epitaxy on c-plane sapphire substrates and the QW transition energies were measured by low temperature photoluminescence. Both the well widths and the Al mole fraction in the AlxGa1-xN(0
Type
research article
Author(s)
Date Issued
1999
Published in
Volume
74
Issue
16
Start page
2361
End page
2363
Subjects
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
Available on Infoscience
October 5, 2010
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