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  4. Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications
 
research article

Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications

Dimitrakis, P
•
Mouti, Anas  
•
Bonafos, Caroline
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2009
Microelectronic Engineering
  • Details
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Type
research article
DOI
10.1016/j.mee.2009.03.074
Author(s)
Dimitrakis, P
Mouti, Anas  
Bonafos, Caroline
Schamm, Sylvie
BenAssayag, Gerard
Ioannou-Sougleridis, V
Schmidt, B
Becker, J
Normand, Pascal
Date Issued

2009

Published in
Microelectronic Engineering
Issue

86

Start page

1838

End page

1841

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
CIME  
Available on Infoscience
November 9, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/44108
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