The rapid advancement of modern technology has led to a steep rise in global energy demand, posing serious challenges related to climate change and the geopolitical complexities of energy sourcing. In this context, modulators and optical amplifiers have become essential components in next-generation photonic chips, playing a pivotal role in improving energy efficiency across diverse applications ranging from telecommunications to smart window technologies. In particular, optical modulators are critical for controlling light intensity with high precision while minimizing power consumption, thereby contributing to the development of sustainable photonic systems. Among various modulation technologies, light emitting devices based on ionics stand out due to their ability to modulate light using low-voltage, reversible redox reactions. These devices offer significant energy savings over traditional light-emitting displays, as they require no constant voltage to maintain their optical state. Recent research has highlighted the potential of rare-earth-doped oxides, especially those combining the robust ionic-electronic conductivity of mixed ionic-electronic conductors with the optical tunability of RE ions. In this study, we demonstrate that Er-Pr-and Tb-doped yttria-stabilized zirconia integrated into silicon compatible structures are effective active layers in visible-light-emitting displays. Additionally, these rare-earthdoped materials exhibit strong visible light emission wavelengths which can be used for tunable and nonvolatile optical amplification and tunable lasers using ionics. These results highlight the versatility and performance potential of RE-doped YSZ as a multifunctional material platform for future photonic devices.