In this paper we propose a new empirical formulation for modelling the DC drain-current behaviour of CMOS technology devices for RF applications oriented to quantum computing integrated circuits. The approach is based on the well-known Angelov's model, that has been properly modified to include the capability of reproducing the transistor DC I-V characteristics from ambient down to cryogenic temperature. The approach has been successfully applied to 16-nm FinFET technology, showing very good performance in terms of model accuracy.