Hybrid integrated multi-lane erbium-doped Si3N4 waveguide amplifiers
We present the integration of four individual erbium-doped waveguide optical amplifiers on a Si3N4 photonic integrated circuit hybrid integrated with a four-lane semiconductor pump laser diode chip. Each amplifier achieves 15 dB on-chip gain.
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Qiu, Z., Ji, X., Liu, Y., Hafermann, M., Kim, T., Olson, J. C., Ning, W. R., Ronning, C., & Kippenberg, T. (2024). Hybrid integrated multi-lane erbium-doped Si3N4 waveguide amplifiers. Optical Fiber Communication Conference in Proceedings Optical Fiber Communication Conference, OFC 2024. Optical Fiber Communication Conference, San Diego, United States, March 24, 2024. https://doi.org/10.1364/ofc.2024.m4a.5
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2-s2.0-85211722424
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
Friedrich-Schiller-Universität Jena
Applied Materials Incorporated
Applied Materials Incorporated
École Polytechnique Fédérale de Lausanne
Friedrich-Schiller-Universität Jena
École Polytechnique Fédérale de Lausanne
2024
9781957171326
REVIEWED
EPFL
| Event name | Event acronym | Event place | Event date |
San Diego, United States | 2024-03-24 - 2024-03-28 | ||
| Funder | Funding(s) | Grant Number | Grant URL |
EU H2020 research and innovation programme | |||
Defense Advanced Research Projects Agency | |||
EPFL center of MicroNanoTechnology | |||
| Show more | |||