Profile angle control in SIO2 deep anisotropic dry etching for MEMS fabrication

Pavius, M.; Hibert, C.; Flückiger, Ph.; Renaud, Philippe; Rolland, L.; Puech, M.

doi:10.1109/MEMS.2004.1290673

conference paper

Profile angle control in SIO2 deep anisotropic dry etching for MEMS fabrication

•

•

2004

17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest

17th IEEE International Conference on Micro Electro Mechanical Systems

We report a recent breakthrough to control profile angle for SiO2 Deep Anisotropic Dry Etching (SDADE). Our study reveals that gas residence time is the key parameter to control profile angle. Moreover, we show that it is possible to control profile angle, SiO2 etch rate and SiO2 selectivity to Si mask independently. Finally, the optimized process has the following performances: angle profile: 89.8degrees, SiO2 etch rate: 500 nm / min, selectivity: 18:1.

Cite this item

Pavius, M., Hibert, C., Flückiger, Ph., Renaud, P., Rolland, L., & Puech, M. (2004). Profile angle control in SIO2 deep anisotropic dry etching for MEMS fabrication. 17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest, 669–672. https://doi.org/10.1109/MEMS.2004.1290673

Click Copy to copy the citation, or select the text manually.

Name

Pavius_MEMS2004.pdf

Access type

restricted

Size

1.33 MB

Format

Adobe PDF

Checksum (MD5)

efda1c17a138679fbb3a676707a74f90