conference paper
Profile angle control in SIO2 deep anisotropic dry etching for MEMS fabrication
2004
17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest
We report a recent breakthrough to control profile angle for SiO2 Deep Anisotropic Dry Etching (SDADE). Our study reveals that gas residence time is the key parameter to control profile angle. Moreover, we show that it is possible to control profile angle, SiO2 etch rate and SiO2 selectivity to Si mask independently. Finally, the optimized process has the following performances: angle profile: 89.8degrees, SiO2 etch rate: 500 nm / min, selectivity: 18:1.
Type
conference paper
Author(s)
Date Issued
2004
Published in
17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest
Start page
669
End page
672
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
| Event name | Event place | Event date |
Maastricht, NETHERLANDS | JAN 25-29, 2004 | |
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