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research article
Thermal Stability of InP-Based Structures for Wafer Fused Laser Diodes
Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatures 600-650 degrees C which prevents lasing of these structures fused on GaAs substrates. It is shown that the degradation of luminescence characteristics can be decreased by increasing the growth temperature to 480 degrees C and V/III ratio to 4. InAsP/InGaAsP and InGaAs/InGaAsP laser diodes on GaAs substrates have been obtained by localized wafer fusion at 650 degrees C.
Type
research article
Web of Science ID
WOS:000074386800054
Authors
Syrbu, A.V.
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Behrend, J.
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Fernandez, J.
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Publication date
1998
Published in
Volume
188
Issue
1-4
Start page
338
End page
342
Peer reviewed
REVIEWED
Available on Infoscience
February 29, 2008
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