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research article

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Macha, Michal  
•
Ji, Hyun Goo  
•
Tripathi, Mukesh  
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September 2, 2022
Nanoscale Advances

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the most efficient monolayer growth methodologies from tube-furnace systems to vertical-showerhead geometries allows us to overcome the intrinsic process limitations and improve the overall monolayer yield quality. Here, we demonstrate large-area, monolayer molybdenum disulphide growth by combining gas-phase precursor supply with unique tube-furnace approaches of utilizing sodium molybdate pre-seeding solution spincoated on a substrate along with water vapor added during the growth step. The engineered process yields a high-quality, 4-inch scale monolayer film on sapphire wafers. The monolayer growth coverage, average crystal size and defect density were evaluated using Raman and photoluminescence spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and scanning transmission electron microscopy imaging. Our findings provide a direct step forward toward developing a reproducible and large-scale MoS2 synthesis with commercial showerhead reactors.

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Type
research article
DOI
10.1039/d2na00409g
Web of Science ID

WOS:000856043200001

Author(s)
Macha, Michal  
Ji, Hyun Goo  
Tripathi, Mukesh  
Zhao, Yanfei  
Thakur, Mukeshchand  
Zhang, Jing  
Kis, Andras  
Radenovic, Aleksandra  
Date Issued

2022-09-02

Publisher

ROYAL SOC CHEMISTRY

Published in
Nanoscale Advances
Subjects

Chemistry, Multidisciplinary

•

Nanoscience & Nanotechnology

•

Materials Science, Multidisciplinary

•

Chemistry

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Science & Technology - Other Topics

•

Materials Science

•

monolayer mos2

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growth

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layers

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heterostructures

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deposition

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graphene

•

films

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

Available on Infoscience
October 10, 2022
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/191344
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