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  4. Combining in-Situ SEM with High Sensitivity Analytical TEM for Understanding the Degradation of Metallic Interconnects in SOFC
 
research article

Combining in-Situ SEM with High Sensitivity Analytical TEM for Understanding the Degradation of Metallic Interconnects in SOFC

Poitel, Stéphane  
•
Wang, Zhu-Jun
•
Willinger, Marc
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August 4, 2017
Microscopy and Microanalysis
  • Details
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Type
research article
DOI
10.1017/S1431927617010960
Author(s)
Poitel, Stéphane  
Wang, Zhu-Jun
Willinger, Marc
van Herle, Jan  
Hébert, Cécile  
Date Issued

2017-08-04

Published in
Microscopy and Microanalysis
Volume

23

Issue

S1

Start page

2060

End page

2061

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
SCI-STI-JVH  
Available on Infoscience
November 19, 2020
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/173419
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