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research article

Giant shape memory and domain memory effects in antiferroelectric single crystals

Zhuo, Fangping
•
Damjanovic, Dragan  
•
Li, Qiang
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2019
Materials Horizons

We report irreversible and reversible antiferroelectric-ferroelectric phase transitions, shape memory and domain memory effects in (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric tetragonal single crystals. We find that electric-field-induced antiferroelectric to ferroelectric phase transition is an irreversible process at temperatures below depolarization temperature (~50 °C), and achieve a giant shape memory strain value of 0.70% at room temperature. With the help of in situ polarized light microscope, we discover a reversible phase transition between antiferroelectric and ferroelectric phases and domain memory effect during the electric field cycling above the depolarization temperature. In addition, single crystal X-ray diffraction results reveal that field-induced transformations between incommensurate antiferroelectric and commensurate ferroelectric modulations enable the emergence of shape and domain memory effects. A physical picture is proposed to explain these phase-transformation-mediated memory effects. Their discovery is expected to stimulate a systematic research upsurge of domain engineering and structure–property relationships in the quest for developing new antiferroelectric or ferroelectric devices.

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Type
research article
DOI
10.1039/C9MH00352E
Author(s)
Zhuo, Fangping
Damjanovic, Dragan  
Li, Qiang
Zhou, Yaming
Ji, Yongjie
Yan, Qingfeng
Zhang, Yiling
Zhou, Yun
Chu, Xiangcheng
Date Issued

2019

Published in
Materials Horizons
Volume

6

Issue

8

Start page

1699

End page

1706

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
SCI-STI-DD  
Available on Infoscience
May 14, 2019
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/156418
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