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  4. Unified rule based correction for corners in proximity lithography mask using high resolution features
 
research article

Unified rule based correction for corners in proximity lithography mask using high resolution features

Puthankovilakam, Krishnaparvathy  
•
Scharf, Toralf  
•
Herzig, Hans Peter  
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2017
Microelectronic Engineering

Printing industry and printing techniques are increasing its market value by new methodologies. The resolution and accuracy of the pattern transfer is always a challenge for the industry, especially for the proximity printing industries which use mask aligners. In this sector proximity correction structures which are printed at different proximity gap can play an important role. Different correction methods exist to increase the accuracy of pattern transfer, but most of them are defined for projection techniques in wafer steppers. Our main aim is to define a simple and universal rule based resolution enhancement, using the cost effective method of optical proximity correction for mask aligners. Our concept is based on the fact that today's mask fabrication allows for implementing amplitude structures on the mask with very high resolutions at competitive price. This gives the possibility to draw fine proximity correction structures operating in the resonance regime having Fresnel numbers larger than one. The most prominent problem that always exists is of corner rounding. Here, we have designed a correction structure to prevent corner rounding based on high resolution amplitude mask elements. We proceed to a detailed analysis of the results using simulation, optical characterization and printing. The main advantage of the new correction structure is that, both 10 μm and larger line widths can be printed with precisions on the same wafer at the same proximity gap and in a single exposure.

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Type
research article
DOI
10.1016/j.mee.2017.03.001
Web of Science ID

WOS:000399844900007

Author(s)
Puthankovilakam, Krishnaparvathy  
Scharf, Toralf  
Herzig, Hans Peter  
Vogler, Uwe
Voelkel, Reinhard
Date Issued

2017

Publisher

Elsevier

Published in
Microelectronic Engineering
Volume

172

Start page

35

End page

44

Subjects

Proximity printing

•

Optical proximity correction (OPC)

•

Rule based correction

•

High Resolution Interference Microscopy (HRIM)

•

Rule based correction

•

MO exposure optics

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

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March 15, 2017
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/135379
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