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book part or chapter
Nitride-based electron devices for high-power/high-frequency applications
Gil, Bernard
Progress in the development of III-nitride materials has made possible the fabrication of many different types of electron devices. This chapter describes the main advantages of GaN-based electronics as well as some of the main electronic devices developed with this material system. We introduce the key material properties and figures of merit that make III-nitride materials ideal for many high-power/high-frequency applications. Then we focus on the different GaN diode structures developed so far, before discussing GaN bipolar transistors. Finally, we review the state of the art regarding field-effect transistors, both lateral and vertical.
Type
book part or chapter
Authors
Editors
Gil, Bernard
Publication date
2013
Publisher
Published in
III-Nitride Semiconductors and their Modern Devices
ISBN of the book
978-0-19968-172-3
EPFL units
Available on Infoscience
May 6, 2016
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