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  4. Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films
 
research article

Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films

Mcgilly, L. J.
•
Feigl, L.
•
Dai, X.
Show more
2015
Ferroelectrics

Ferroelectric switching in circular and ring capacitors has been performed using a stroboscopic mode of piezoresponse force microscopy. A simple geometric model incorporating the characteristic domain wall motion is sufficient to describe the switching of circular capacitors but which however breaks down when attempting to describe the ring switching. Analysis of the switching dynamics implies that the domain wall moves faster along the perimeter of both the circle and ring electrode structures.

  • Details
  • Metrics
Type
research article
DOI
10.1080/00150193.2015.1012421
Web of Science ID

WOS:000357364500003

Author(s)
Mcgilly, L. J.
Feigl, L.
Dai, X.
Setter, N.  
Date Issued

2015

Publisher

Taylor & Francis

Published in
Ferroelectrics
Volume

480

Issue

1

Start page

58

End page

64

Subjects

domain walls

•

PZT

•

ferroelectric switching

•

Domains

•

PFM

•

thin films

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LC  
Available on Infoscience
September 28, 2015
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/119385
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