Loading...
conference paper
Low-Voltage Read/Write Circuit Design for Transistorless ReRAM Crossbar Arrays in 180nm CMOS Technology
2015
Proceedings of 2015 IEEE International Symposium on Circuits and Systems (ISCAS)
This paper presents a read-write design solution for passive ReRAM crossbar memory arrays to overcome the sneak current paths problem. The proposed circuitry includes an auto-calibration feature to overcome the sneak current effects during the READ operation, and a WRITE protocol to minimize the current at each row and column lines. The presented circuit has been designed in 180 nm standard CMOS technology based on the electrical characteristics of fabricated ReRAM devices.
Type
conference paper
Authors
Publication date
2015
Published in
Proceedings of 2015 IEEE International Symposium on Circuits and Systems (ISCAS)
Start page
9
End page
12
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
Lisbon, Portugal | May 24-27, 2015 | |
Available on Infoscience
January 22, 2015
Use this identifier to reference this record