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  4. Near bandgap photoemission in GaAs ; application to GaAs/GaAlAs 2D structures
 
conference paper

Near bandgap photoemission in GaAs ; application to GaAs/GaAlAs 2D structures

Houdré, R.
•
Drouhin, H. J.
•
Hermann, C.
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1986
18th International Conference on the Physics of Semiconductors
  • Details
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Type
conference paper
Author(s)
Houdré, R.
Drouhin, H. J.
Hermann, C.
Lampel, G.
Gossard, A. C.
Date Issued

1986

Publisher

World Scientific

Published in
18th International Conference on the Physics of Semiconductors
Start page

541

End page

548

Note

invited communication

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOEQ  
SCI-SB-RH  
Available on Infoscience
August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/10966
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