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  4. Ultrafast Charge Carrier Recombination and Trapping in Hematite Photoanodes under Applied Bias
 
research article

Ultrafast Charge Carrier Recombination and Trapping in Hematite Photoanodes under Applied Bias

Pendlebury, Stephanie R.
•
Wang, Xiuli
•
Le Formal, Florian  
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2014
Journal Of The American Chemical Society

Transient absorption spectroscopy on subpicosecond to second time scales is used to investigate photogenerated charge carrier recombination in Si-doped nanostructured hematite (alpha-Fe2O3) photoanodes as a function of applied bias. For unbiased hematite, this recombination exhibits a 50% decay time of similar to 6 ps, similar to 10(3) times faster than that of TiO2 under comparable conditions. Anodic bias significantly retards hematite recombination dynamics, and causes the appearance of electron trapping on ps-mu s time scales. These ultrafast recombination dynamics, their retardation by applied bias, and the associated electron trapping are discussed in terms of their implications for efficient water oxidation.

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Type
research article
DOI
10.1021/ja504473e
Web of Science ID

WOS:000339228200015

Author(s)
Pendlebury, Stephanie R.
Wang, Xiuli
Le Formal, Florian  
Cornuz, Maurin  
Kafizas, Andreas
Tilley, S. David  
Graetzel, Michael  
Durrant, James R.
Date Issued

2014

Publisher

American Chemical Society

Published in
Journal Of The American Chemical Society
Volume

136

Issue

28

Start page

9854

End page

9857

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPI  
Available on Infoscience
August 29, 2014
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/106304
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