Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Journal articles
  4. Optical nanospectroscopy applications in material science
 
research article

Optical nanospectroscopy applications in material science

Cricenti, A.
•
Longo, G.
•
Ustione, A.
Show more
2004
Applied Surface Science

The advent of scanning near-field optical microscopy (SNOM) has augmented at a microscopic level the usefulness of optical spectroscopy in the region between 300 nm and 10 mum. Two-dimensional imaging of chemical constituents makes this a very attractive and powerful new approach. In this paper we show SNOM results obtained in several geometrical configurations on boron clusters in silicon, Li clusters embedded in a LiF sample and BN growth on silicon. We also show some results on the wavelength dependence of the reflectivity (R) in the near infrared (IR) of biological cells in liquid environment with the observation of the local fluorescence. The SNOM images revealed features that were not present in the corresponding shear-force (SF) images and which were due to localized changes in the bulk properties of the sample. The size of the smallest detected features clearly demonstrated that near-field conditions were reached both in the visible and infrared region. (C) 2004 Elsevier B.V. All rights reserved.

  • Details
  • Metrics
Type
research article
DOI
10.1016/j.apsusc.2004.05.023
Web of Science ID

WOS:000223500800064

Author(s)
Cricenti, A.
Longo, G.
Ustione, A.
Mussi, V.
Generosi, R.
Luce, M.
Rinaldi, M.
Perfetti, P.
Vobornik, D.  
Margaritondo, G.  
Show more
Date Issued

2004

Published in
Applied Surface Science
Volume

234

Issue

1-4

Start page

374

End page

386

Subjects

SNOM

•

infrared

•

photocurrent

•

FREE-ELECTRON-LASER

•

SCANNING-TUNNELING-MICROSCOPY

•

NEAR-FIELD OPTICS

•

BIOLOGICAL SAMPLES

•

PLASMA SOURCE

•

LIF CRYSTALS

•

FORCE

•

PHOTOEMISSION

•

SEMICONDUCTOR

•

REFLECTION

Note

Ist Stutturia Mat, I-00133 Rome, Italy. Ecole Polytech Fed Lausanne, Fac Sci Base, CH-1015 Lausanne, Switzerland. USN, Res Lab, Div Opt Sci, Washington, DC 20375 USA. Vanderbilt Univ, Dept Phys & Astron, Nashville, TN USA. Univ Rome, Dipartimento Fis, Rome, Italy. Vanderbilt Univ, Dept Physiol & Mol Biophys, Nashville, TN 37232 USA. Univ Roma Tre, Dipartimento Fis, I-00146 Rome, Italy. CR Frascati, UTS Tecnol Fis Avanzate, ENEA, I-00044 Frascati, Italy. VNIIFTRI, MISDC, Moscow 141570, Russia. Cricenti, A, Ist Stutturia Mat, Via Fosso Cavaliere 100, I-00133 Rome, Italy. antonio.cricenti@ism.cnr.it

ISI Document Delivery No.: 848XG

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSE  
LPRX  
Available on Infoscience
October 3, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/234208
Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés