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research article

Piezoelectric aluminum nitride thin films for microelectromechanical systems

Piazza, Gianluca
•
Felmetsger, Valeriy
•
Muralt, Paul  
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2012
Mrs Bulletin

This article reports on the state-of-the-art of the development of aluminum nitride (AlN) thin-film microelectromechanical systems (MEMS) with particular emphasis on acoustic devices for radio frequency (RF) signal processing. Examples of resonant devices are reviewed to highlight the capabilities of AlN as an integrated circuit compatible material for the implementation of RF filters and oscillators. The commercial success of thin-film bulk acoustic resonators is presented to show how AlN has de facto become an industrial standard for the synthesis of high performance duplexers. The article also reports on the development of a new class of AlN acoustic resonators that are directly integrated with circuits and enable a new generation of reconfigurable narrowband filters and oscillators. Research efforts related to the deposition of doped AlN films and the scaling of sputtered AlN films into the nano realm are also provided as examples of possible future material developments that could expand the range of applicability of AlN MEMS.

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Type
research article
DOI
10.1557/mrs.2012.268
Web of Science ID

WOS:000311050200017

Author(s)
Piazza, Gianluca
Felmetsger, Valeriy
Muralt, Paul  
Olsson, Roy H. III
Ruby, Richard
Date Issued

2012

Publisher

Cambridge University Press

Published in
Mrs Bulletin
Volume

37

Issue

11

Start page

1051

End page

1061

Note

National Licences

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LC  
Available on Infoscience
February 27, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/89300
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