Sharp high-resolution Si 2p core level on the Sb-terminated Si(111) surface: Evidence for charge transfer
An Sb/Si(lll)root 3x root3 surface has been studied by high-resolution core-level spectroscopy. All the components of the Si 2p core level related to the clean surface have disappeared, and one strong Sb-induced component could be identified at a binding energy +0.13 eV with respect to the bulk peak. Such a component is mainly due to charge transfer between Si atoms at the top layer and Sb trimers. Two more small components are observed: one at +0.29 eV, due to Sb atoms residing at a different position, and one at -0.14 eV, due to local disorder. On the Si 2p core level taken in bulk sensitive mode, we found a very narrow bulk component with a total full width at half maximum of 130 meV at T=100 K.
WOS:000089977100017
2000
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CNR, Ist Struttura Mat, I-00133 Rome, Italy. CNR, Ist Metodol Avanzate Inorgan, I-34012 Basovizza, Italy. CNRS, CRMC2, UPR 7251, F-13288 Marseille, France. Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Cricenti, A, CNR, Ist Struttura Mat, Via Fosso Cavaliere 100, I-00133 Rome, Italy.
ISI Document Delivery No.: 365YB
REVIEWED
EPFL