book part or chapter
Growth Methods and Properties of High Purity III-V Nanowires by Molecular Beam Epitaxy
November 27, 2008
Advances in Solid State Physics. 48
The synthesis and properties of catalyst-free III-V nanowires with MBE is reviewed. The two main methods are Selective Area Epitaxy and gallium-assisted synthesis. The growth mechanisms are reviewed, along with the design possibilities of each technique. Finally, the excellent structure and ultra-high purity are presented by Raman and Photoluminescence spectroscopy.
Type
book part or chapter
Author(s)
Spirkoska, D.
Colombo, C.
Heiß, M.
Heigoldt, M.
Abstreiter, G.
École Polytechnique Fédérale de Lausanne
Date Issued
2008-11-27
Publisher
Publisher place
Berlin
Published in
Advances in Solid State Physics. 48
DOI of the book
ISBN of the book
978-3-540-85858-4
978-3-642-09940-3
978-3-540-85859-1
Total of pages
390
Start page
13
End page
26
ISSN (of the series)
1438-4329
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
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