This letter proposes a novel resonant double-pulse test method for evaluating power semiconductor devices under realistic resonant converter operating conditions. The test setup enables precise evaluation of power losses and switching behavior as observed in practical resonant converters, specifically LLC converters, accounting for the influence of device-intrinsic parasitic capacitances, resonant tank parameters, dead time, and operating temperature. Rather than designing a complete resonant converter, which typically includes a high-frequency transformer, complete design spaces can be explored with less effort, and parameters can be optimized, thereby ensuring zerovoltage switching and improving overall efficiency. Finally, the proposed method is experimentally validated by evaluating the performance of a silicon-carbide device operating at 1 MHz, but the presented principles are general and applicable to any power semiconductor devices, regardless of their voltage and current ratings.