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  4. Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric
 
research article

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric

Oliva, Nicolò  
•
Ilarionov, Yury Yu
•
Casu, Emanuele Andrea  
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August 7, 2019
IEEE Journal of the Electron Devices Society
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Type
research article
DOI
10.1109/JEDS.2019.2933745
Author(s)
Oliva, Nicolò  
Ilarionov, Yury Yu
Casu, Emanuele Andrea  
Cavalieri, Matteo  
Knobloch, Theresia
Grasser, Tibor
Ionescu, Mihai Adrian  
Date Issued

2019-08-07

Published in
IEEE Journal of the Electron Devices Society
Volume

7

Start page

1163

End page

1169

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
January 24, 2020
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/164897
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