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  4. Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes
 
research article

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu, Chao  
•
Abdul Khadar, Riyaz
•
Matioli, Elison
June 1, 2018
IEEE Electron Device Letters
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Type
research article
DOI
10.1109/LED.2018.2841959
Author(s)
Liu, Chao  
Abdul Khadar, Riyaz
Matioli, Elison
Date Issued

2018-06-01

Publisher

Institute of Electrical and Electronics Engineers

Published in
IEEE Electron Device Letters
Volume

39

Issue

7

Start page

1034

End page

1037

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
POWERLAB  
Available on Infoscience
August 8, 2018
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/147679
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