Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Journal articles
  4. Facile and low-cost synthesis of a novel dopant-free hole transporting material that rivals Spiro-OMeTAD for high efficiency perovskite solar cells
 
research article

Facile and low-cost synthesis of a novel dopant-free hole transporting material that rivals Spiro-OMeTAD for high efficiency perovskite solar cells

Abdellah, Islam M.
•
Chowdhury, Towhid H.
•
Lee, Jae-Joon
Show more
January 7, 2021
Sustainable Energy & Fuels

A Spiro fluorene-based dopant-free hole-transporting material denoted as Spiro-IA has been designed and developed from inexpensive starting materials with high yield via a simple synthetic approach for application in perovskite solar cells (PSCs). The unit cost of Spiro-IA can be as low as 1/9th that of the conventional Spiro-OMeTAD. Moreover, Spiro-IA shows good solubility in different organic solvents, e.g. CHCl3, acetone, EtOH, and DMF, and showed favorable charge-transport ability and greater photocurrent density compared to Spiro-OMeTAD. The UV absorption/emission spectra of Spiro-IA (lambda(max) = 430 nm, E-max = 601 nm) are red shifted compared to those of Spiro-OMeTAD (lambda(max) = 388 nm, E-max = 414 nm) with larger stokes shift values (171 nm) which helps suppress the loss of incident photons absorbed by the HTM and is more beneficial for improving the performance of PSCs. Optical and electrochemical studies show that Spiro- IA fulfilled the basic requirements of the hole transfer and electron regeneration process in the fabricated devices. PSCs fabricated (surface area = 1.02 cm(2)) with dopant-free Spiro-IA achieved a maximum power conversion efficiency (PCE) of 15.66% (J(SC) = 22.14 mA cm(-2), V-OC = 1.042 V, FF = 0.679%), which was comparable to that of the most commonly used Li-doped Spiro-OMeTAD (PCE = 15.93%, J(SC) = 20.37 mA cm(-2), V-OC = 1.057 V, FF = 0.74%) and surpassed that of the dopant- free Spiro- OMeTAD (PCE = 9.34%). Additionally, the PSCs based on dopant-free Spiro-IA achieved outstanding long-term stability and favorable conductivity (sigma = 2.104 x 10(-4) S cm(-1)) compared to those based on Spiro-OMeTAD (sigma = 9.00 x 10(-8) S cm(-1)). DFT studies were performed using Gaussian 09 at the B3LYP/6-31G (d/p) level to investigate their electron cloud delocalization in HOMO/LUMO levels. These results showed that Spiro-IA could be a promising candidate for low-cost PSC technology and has a great chance to supersede the expensive Spiro-OMeTAD.

  • Details
  • Metrics
Type
research article
DOI
10.1039/d0se01323d
Web of Science ID

WOS:000607305300016

Author(s)
Abdellah, Islam M.
Chowdhury, Towhid H.
Lee, Jae-Joon
Islam, Ashraful
Nazeeruddin, Mohamad K.
Graetzel, Michael  
El-Shafei, Ahmed
Date Issued

2021-01-07

Publisher

ROYAL SOC CHEMISTRY

Published in
Sustainable Energy & Fuels
Volume

5

Issue

1

Start page

199

End page

211

Subjects

Chemistry, Physical

•

Energy & Fuels

•

Materials Science, Multidisciplinary

•

Chemistry

•

Materials Science

•

halide perovskites

•

high-performance

•

dye

•

conductivity

•

stability

•

strategy

•

hybrid

•

units

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPI  
Available on Infoscience
March 26, 2021
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/176746
Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés