Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects

Helman, NC; Roth, JE; Altug, H; Miller, DAB; Bour, DP

doi:10.1109/LEOS.2004.1363312

conference paper

Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects

Helman, NC

•

Roth, JE

•

Altug, H

2004

The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004

17th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society

We present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment tolerance of 30 mum.