Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)

Arun, A.; Goffman, M. F.; Grogg, D.; Filoramo, A.; Campidelli, S.; Derycke, V.; Idda, T.; Salet, P.; Ionescu, A. M.

doi:10.1109/MEMSYS.2010.5442552

conference paper

Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)

Arun, A.

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Goffman, M. F.

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Grogg, D.

2010

MEMS 2010: 23rd IEEE International Conference On Micro Electro Mechanical Systems, Technical Digest

23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010)

In this paper we report the first experimental demonstration of Micro-Electro-Mechanical resonator based on a Carbon Nanotube-Array-Suspended-Gate-Field-Effect-Transistor (CNT-SGFET). A dense array of single-walled CNT aligned by ac-dielectrophoresis technique forms the suspended gate electrode of a conventional silicon based FET. Resonance frequency of 120 MHz is reported. An equivalent electrical model has been developed for the resonator.