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research article

MOLED: simulation of multilayer organic light emitting diodes

Houili, H.  
•
Tutis, E.
•
Lütjens, H.
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2003
Computer Physics Communications

MOLED solves the dynamics of electrons and holes in multilayer organic light emitting diodes (OLED). The carriers are injected on the positive and negative electrodes of the device by tunneling through a potential barrier. Thermal excitation processes across the barrier are also included. In the interior of the device the electron-hole recombination occurs when the two carriers are close enough, according to a model inspired from the one of Langevin. A fraction of these recombined pairs gives photons. The charge transport inside the organic material occurs through hopping. Several choices of mobility formulae are available in the code. MOLED can be used for OLEDs with an arbitrary number of layers. The output consists of numerous fields that describe the device performance. For example, there are the current, the recombination and the charge density distributions, the electric field distribution, the current-voltage characteristics and the device internal quantum efficiency

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Type
research article
DOI
10.1016/S0010-4655(03)00435-1
Web of Science ID

WOS:000187001200009

Author(s)
Houili, H.  
•
Tutis, E.
•
Lütjens, H.
•
Bussac, M. N.  
•
Zuppiroli, L.  
Date Issued

2003

Publisher

Elsevier

Published in
Computer Physics Communications
Volume

156

Issue

1

Start page

108

Subjects

carrier mobility

•

electroluminescence

•

electron-hole recombination

•

hopping conduction

•

multilayers

•

organic light emitting diodes

•

organic semiconductors

•

semiconductor device models

•

tunnelling

•

MOLED code

•

multilayer organic light emitting diode simulation

•

positive electrode

•

negative electrode

•

potential barrier

•

thermal excitation process

•

electron-hole recombination

•

Langevin recombination

•

photon

•

charge transport

•

organic material

•

hopping conductivity

•

carrier mobility formulae

•

charge density distribution

•

electric field distribution

•

current-voltage characteristics

•

device internal quantum efficiency

•

organic semiconductor

•

image force

•

carrier injection

•

electroluminescence

•

tunneling

•

electron dynamics

•

hole dynamics

Note

Copyright 2004, IEE

8144707

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOMM  
Available on Infoscience
April 3, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/4216
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