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  4. On Gm-boosting and cyclostationary noise mechanisms in low-voltage CMOS differential Colpitts VCOs
 
conference paper

On Gm-boosting and cyclostationary noise mechanisms in low-voltage CMOS differential Colpitts VCOs

Koukab, Adil  
•
Talebi Amiri, Omid  
2012
I
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

This paper presents a theoretical study of CMOS differential Colpitts VCOs. The objective is to provide a deep understanding of the different mechanisms that impact the performances of these VCOs, namely the Gm-boosting and cyclostationary noise. The developed methodology and expressions can be used to analyze, optimize and build new VCO topologies. A novel topology with an optimized gate to source (GS) feedback is proposed. It exhibits a figure of merit (FOM) better than -190 dBc/Hz/mW for all the frequency offsets.

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Type
conference paper
DOI
10.1109/SiRF.2012.6160136
Web of Science ID

WOS:000307348600017

Author(s)
Koukab, Adil  
Talebi Amiri, Omid  
Date Issued

2012

Publisher

Ieee

Publisher place

New York

Published in
I
ISBN of the book

978-1-4577-1316-3

Total of pages

4

Subjects

Phase noise

•

Switching circuits

•

Topology

•

Transconductance

•

Transistors

•

Voltage-controlled oscillators

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
LEG1  
Event nameEvent date
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

Jan 16-18 2012

Available on Infoscience
May 15, 2012
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/80451
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