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  4. An Introduction To The Technology Of Thin Film Silicon Photovoltaics
 
conference paper

An Introduction To The Technology Of Thin Film Silicon Photovoltaics

Feltrin, A.
•
Bartlome, R.  
•
Battaglia, C.
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2009
Informacije Midem-Journal Of Microelectronics Electronic Components And Materials

Several aspects of the science and technology of thin film silicon for photovoltaic applications will be presented. The potential advantages of this technology over crystalline wafer technology will be discussed. A basic understanding of the material properties of thin film silicon layers enables to assess their potential and limitations when used in photovoltaic devices. A brief review of the production technology for thin films will be given with particular emphasis on amorphous and microcrystalline silicon. As for other photovoltaic technologies, the push for higher efficiency of thin film silicon devices is strong. An appealing feature of these materials is that they can be easily integrated in multi-junction tandem devices. For instance, stacking amorphous and microcrystalline silicon thin films in one tandem cell, the micromorph cell, increases the efficiency well above the characteristic values of single junction cells. The Institute of Microengineering (IMT) has been a pioneer in the research and development of thin film silicon photovoltaics over the last 20 years and several latest developments on are reviewed.

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Type
conference paper
Web of Science ID

WOS:000277050900010

Author(s)
Feltrin, A.
Bartlome, R.  
Battaglia, C.
Boccard, M.  
Bugnon, G.  
Buehlmann, P.
Cubero, O.
Despeisse, M.  
Domine, D.
Haug, F.-J.  
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Date Issued

2009

Published in
Informacije Midem-Journal Of Microelectronics Electronic Components And Materials
Volume

39

Start page

231

End page

236

Subjects

thin film silicon

•

microcrystalline silicon

•

tandem solar cells

•

Hydrogenated Microcrystalline Silicon

•

Chemical-Vapor-Deposition

•

Solar-Cells

•

Amorphous-Silicon

•

Glow-Discharge

•

70 Mhz

•

Electrical-Properties

•

Excitation-Frequency

•

Plasma

•

Silane

Note

IMT-NE Number: 547

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
PV-LAB  
Available on Infoscience
February 1, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/46323
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