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research article

Intraband carrier photoexcitation in quantum dot lasers

Moreno, P.
•
Richard, M.  
•
Rossetti, M.
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2008
Nano Letters

We unveil the role of bound-to-continuum photoexcitation of carriers as a relevant process that affects the performance of quantum dot (OD) lasers. We present the response of an InAs/InGaAs QD laser to a sub-band gap pump, showing an unexpected depletion of the emitted photons. We relate this observation with carrier photoexcitation through additional transmission and photocurrent measurements. We provide a theoretical support to the experimental data and highlight the important role of this process in the laser characteristics.

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Type
research article
DOI
10.1021/nl073115a
Web of Science ID

WOS:000253947400021

Author(s)
Moreno, P.
Richard, M.  
Rossetti, M.
Portella-Oberli, M.  
Li, L. H.
Deveaud-Pledran, B.  
Fiore, A.  
Date Issued

2008

Publisher

American Chemical Society

Published in
Nano Letters
Volume

8

Start page

881

End page

885

Subjects

Semiconductor Optical Amplifiers

•

Ultrafast Switch-Off

•

Dark-Pulse Formation

•

Gain

•

Absorption

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOEQ  
Available on Infoscience
November 30, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/61537
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