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  4. Critical Resistance at the Superconductor-Insulator Transition in Hole-Doped Cuprates
 
research article

Critical Resistance at the Superconductor-Insulator Transition in Hole-Doped Cuprates

Dubuis, Guy  
•
Bollinger, Anthony T.
•
Pavuna, Davor  
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2013
Journal of Superconductivity and Novel Magnetism

Here, we show that in several p-type cuprates, the superconductor-to-insulator transition (SIT) occurs at the critical sheet resistance approximately equal to the quantum resistance of pairs, RQ=h/4$e^{2}$=6.5 kΩ. In a relatively broad range of temperatures and doping levels near the quantum critical point, the sheet resistance shows universal behavior and scaling characteristic of two-dimensional quantum phase transition.

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