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  4. Critical Resistance at the Superconductor-Insulator Transition in Hole-Doped Cuprates
 
research article

Critical Resistance at the Superconductor-Insulator Transition in Hole-Doped Cuprates

Dubuis, Guy  
•
Bollinger, Anthony T.
•
Pavuna, Davor  
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2013
Journal of Superconductivity and Novel Magnetism

Here, we show that in several p-type cuprates, the superconductor-to-insulator transition (SIT) occurs at the critical sheet resistance approximately equal to the quantum resistance of pairs, RQ=h/4$e^{2}$=6.5 kΩ. In a relatively broad range of temperatures and doping levels near the quantum critical point, the sheet resistance shows universal behavior and scaling characteristic of two-dimensional quantum phase transition.

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Type
research article
DOI
10.1007/s10948-012-1982-6
Web of Science ID

WOS:000317014500004

Author(s)
Dubuis, Guy  
Bollinger, Anthony T.
Pavuna, Davor  
Božović, Ivan
Date Issued

2013

Publisher

Springer Verlag

Published in
Journal of Superconductivity and Novel Magnetism
Volume

26

Issue

4

Start page

749

End page

754

Subjects

Critical Resistance

•

Superconductivity

•

Superconductor-Insulator Transition

•

Cuprate

•

Scaling

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPMC  
Available on Infoscience
April 3, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/91298
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