The study of polarization reversal in (Pb,La)(Zr,Ti)O-3 thin films reveals a drastic difference between the switching kinetics observed at RT and at low temperature of 40 K. In particular, at 40 K, the switching kinetics in studied films is similar to that observed in ferroelectric single crystals. Additionally, the films with completely different switching behavior at RT show very similar switching properties at 40 K. The data analysis suggests that the polarization reversal at RT is limited mainly by nucleation of reversed domains, while at 40 K, the switching kinetics is governed by domain wall motion. It is demonstrated that the measurements of switching kinetics at low temperature can provide useful information for modeling of the important, practical case of polarization reversal at RT. (C) 2003 American Institute of Physics.