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  4. Micromechanical measurement of beating patterns in the quantum oscillatory chemical potential of InGaAs quantum wells due to spin-orbit coupling
 
research article

Micromechanical measurement of beating patterns in the quantum oscillatory chemical potential of InGaAs quantum wells due to spin-orbit coupling

Herzog, Florian
•
Heyn, Christian
•
Hardtdegen, Hilde
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2015
Applied Physics Letters

The quantum oscillatory magnetization M(B) and chemical potential l(B) of a two-dimensional (2D) electron system provide important and complementary information about its ground state energy at low temperature T. We developed a technique that provides both quantities in the same cool-down process via a decoupled static operation and resonant excitation of a micromechanical cantilever. On InGaAs/InP heterostructures, we observed beating patterns in both M(B) and l(B) attributed to spin-orbit interaction. A significantly enhanced sensitivity in l enabled us to extract Rashba and Dresselhaus parameters with high accuracy. The technique is powerful for detailed investigations on the electronic properties of 2D materials.

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Type
research article
DOI
10.1063/1.4929840
Web of Science ID

WOS:000360926200030

Author(s)
Herzog, Florian
Heyn, Christian
Hardtdegen, Hilde
Schäpers, Thomas
Wilde, Marc A.
Grundler, Dirk  
Date Issued

2015

Publisher

AIP American Institute of Physics

Published in
Applied Physics Letters
Volume

107

Issue

9

Article Number

092101

Subjects

semiconductor

•

heterostructure

•

de Haas-van Alphen effect

•

quantum oscillations

•

diamagnetism

•

2D materials

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LMGN  
Available on Infoscience
November 17, 2015
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/120656
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