Sub-micrometer channel length (0.5 mu m) organic thin-film transistors (OTFTs) are demonstrated using a process flow combining nano-imprint lithography (NIL) and self-alignment (SA). A dedicated test structure was designed and samples were fabricated on 4-in. plastic foils using a p-type sublimated small molecule (pentacene) as semiconductor. Field-effect mobilities, in saturation, between 0.1 and 1 cm(2)/Vs were obtained not only for the supermicron OTFTs but also for the submicron OTFTs. Those devices were used to select a model based on the "TFT Generic Charge Drift model" which works well for a broad range of channel lengths including the submicron OTFTs. We show that these OTFTs can be accurately modeled, thus giving access to complex circuit simulations and design. (C) 2013 Elsevier B. V. All rights reserved.