Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

Kayal, M.

doi:10.1109/ESSDERC.2007.4430954

conference paper

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

Harik, L.

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Sallese, Jean-Michel

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Kayal, M.

2008

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2mW/m2 were measured. © 2007 IEEE.