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  4. Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
 
research article

Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

Padilla de la Torre, José Luis  
•
Alper, Cem  
•
Gámiz, Francisco
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2015
Applied Physics Letters
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Type
research article
DOI
10.1063/1.4905866
Web of Science ID

WOS:000348054700113

Author(s)
Padilla de la Torre, José Luis  
Alper, Cem  
Gámiz, Francisco
Ionescu, Mihai Adrian  
Date Issued

2015

Publisher

American Institute of Physics

Published in
Applied Physics Letters
Volume

106

Issue

2

Start page

026102

End page

1

Subjects

band-to-band tunneling

•

heterogate electron-hole bilayer tunnel field-effect transistor

•

quantum confinement

•

inversion layer formation

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
May 26, 2015
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/114066
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