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  4. Reduction of the Superconducting Gap of Ultrathin Pb Islands Grown on Si(111)
 
research article

Reduction of the Superconducting Gap of Ultrathin Pb Islands Grown on Si(111)

Brun, Christophe
•
Hong, I.-Po
•
Patthey, Francois  
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2009
Physical Review Letters

The energy gap Delta of superconducting Pb islands grown on Si(111) was probed in situ between 5 and 60 monolayers by low-temperature scanning tunneling spectroscopy. Delta was found to decrease from its bulk value as a function of inverse island thickness. Corresponding T-c values, estimated using bulk gap-to-T-c ratio, are in quantitative agreement with ex situ magnetic susceptibility measurements, however, in strong contrast to previous scanning probe results. Layer-dependent ab initio density functional calculations for freestanding Pb films show that the electron-phonon coupling constant, determining T-c, decreases with diminishing film thickness.

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Type
research article
DOI
10.1103/PhysRevLett.102.207002
Web of Science ID

WOS:000266309000055

Author(s)
Brun, Christophe
Hong, I.-Po
Patthey, Francois  
Sklyadneva, I. Yu.
Heid, R.
Echenique, P. M.
Bohnen, K. P.
Chulkov, E. V.
Schneider, Wolf-Dieter  
Date Issued

2009

Published in
Physical Review Letters
Volume

102

Issue

20

Article Number

207002

Subjects

Transition-Temperature

•

Quantum-Size

•

Metal-Films

•

Thin-Films

•

Potentials

•

Density

•

Energy

•

Limit

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPS  
Available on Infoscience
November 30, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/60158
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