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  4. Sub-100 nm-scale Aluminum Nanowires by Stencil Lithography: Fabrication and Characterization
 
conference paper

Sub-100 nm-scale Aluminum Nanowires by Stencil Lithography: Fabrication and Characterization

Vazquez-Mena, O.  
•
Savu, V.  
•
Sidler, K.  
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2008
IEEE-NEMS 2008 Proceedings
3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems

We present the fabrication process and electrical characterization of sub-100 nm scale Al nanowires (NWs) fabricated by stencil lithography (SL). We use a stencil with sub- 100 nm wide nanoslits patterned by focused ion beam (FIB) milling. The stencil is aligned and clamped onto a substrate containing predefined electrical contacts. Then a 60 nm-thick layer of Aluminum (Al) is deposited through the stencil producing NWs with lengths of ~1, 2 and 5 μm and widths down to 65 nm. The NWs show an ohmic behavior with values varying from 30 Ω up to 300 Ω, depending on the dimensions of the structures. We have extracted a resistivity for the Al NWs of ~10 x 10-8 Ωm. We also show that stencils can be cleaned and reused, proving that SL is a cost-efficient and scalable manufacturing method for the direct fabrication of metallic NWs on a full wafer scale.

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Type
conference paper
DOI
10.1109/NEMS.2008.4484447
Web of Science ID

WOS:000257066200174

Author(s)
Vazquez-Mena, O.  
Savu, V.  
Sidler, K.  
Villanueva, G.  
van den Boogaart, M. A. F.  
Brugger, J.  
Date Issued

2008

Published in
IEEE-NEMS 2008 Proceedings
Start page

807

End page

811

Subjects

nanowires

•

stencil lithography

URL

URL

http://www.ieee-nems.org/
Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NEMS  
LMIS1  
Event nameEvent placeEvent date
3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems

Sanya, Hainan Island, China

January 6-9, 2008.

Available on Infoscience
January 29, 2008
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/17245
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