Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Journal articles
  4. Sputtering-induced reemergence of the topological surface state in Bi2Se3
 
research article

Sputtering-induced reemergence of the topological surface state in Bi2Se3

Queiroz, Raquel
•
Landolt, Gabriel
•
Muff, Stefan  
Show more
2016
Physical Review B

We study the fate of the surface states of Bi2Se3 under disorder with strength larger than the bulk gap, caused by neon sputtering and nonmagnetic adsorbates. We find that neon sputtering introduces strong but dilute defects, which can be modeled by a unitary impurity distribution, whereas adsorbates, such as water vapor or carbon monoxide, are best described by Gaussian disorder. Remarkably, these two disorder types have a dramatically different effect on the surface states. Our soft x-ray angle-resolved photoemission spectroscopy (ARPES) measurements combined with numerical simulations show that unitary surface disorder pushes the Dirac state to inward quintuplet layers, burying it below an insulating surface layer. As a consequence, the surface spectral function becomes weaker but retains its quasiparticle peak. This is in contrast to Gaussian disorder, which smears out the quasiparticle peak completely. At the surface of Bi2Se3, neon sputtering adds additional unitary scatterers to the Gaussian disorder of the adsorbates. Since the introduced unitary disorder pushes the surface state to inward layers, the effects of Gaussian disorder are reduced. As a result the ARPES signal becomes sharper upon sputtering.

  • Files
  • Details
  • Metrics
Type
research article
DOI
10.1103/PhysRevB.93.165409
Web of Science ID

WOS:000373572700003

Author(s)
Queiroz, Raquel
Landolt, Gabriel
Muff, Stefan  
Slomski, Bartosz
Schmitt, Thorsten
Strocov, Vladimir N.
Mi, Jianli
Iversen, Bo Brummerstedt
Hofmann, Philip
Osterwalder, Juerg
Show more
Date Issued

2016

Publisher

Amer Physical Soc

Published in
Physical Review B
Volume

93

Issue

16

Article Number

165409

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
SCI-SB-HD  
Available on Infoscience
July 19, 2016
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/127267
Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés