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  4. AlN-based anodes for far-UVC field emission device at 225 nm
 
conference paper

AlN-based anodes for far-UVC field emission device at 225 nm

Demolon, Pierre  
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Carlin, Jean François  
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Dubois, Marc Alexandre
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Kim, Jong Kyu
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Krames, Michael R.
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2024
Proceedings of SPIE - The International Society for Optical Engineering
28 Light-Emitting Devices, Materials, and Applications

We report on progress in the realization of Field Emission Devices (FED) with AlN-based anodes emitting in the spectral window of 200-230nm for persistent disinfection of air and surfaces in the presence of humans. Modeling, experimental studies, and trade-offs between sputter deposition and MOVPE grown AlN anode films and GaN/AlN multiple quantum wells (MQW) indicate the feasibility of 1’’-size FED emitting at 225 nm wavelength with 1 mW power, capable to quickly deactivate the SARS-CoV-2 virus.

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