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  4. Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling
 
conference paper

Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling

Fernandez-Bolanos, Montserrat
•
Lisec, Thomas
•
Dehollain, Catherine  
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2009
2009 IEEE International Electron Devices Meeting
IEEE International Electron Devices Meeting (IEDM 2009)

This paper presents wideband tunable band-stop filters working in the Ku to Ka-band frequencies based on a miniature single-MEM device combining a central capacitive MEM switch with AlN dielectric and inductive suspension arms. An outstanding 55% tuning range is achieved thanks to an original device design which features suspended-meander arm inductance with zipping capacitive coupling enabling a continuous tuning. Two band-stop filters have been designed for 13.5-29.5 GHz and 16-37 GHz frequency range resulting in rejection levels of -15 dB/-20 dB for the whole tuning range and band-pass insertion loss of -0.19 dB/-0.25 dB at 10 GHz, respectively. Temperature measurements have been performed from -100 degrees C to 100 degrees C demonstrating highly stable filter performances and tuning range, which recommends these devices for communications and airborne applications. For low temperatures (-100 degrees C), the pull-in voltage increases by 17% and the tuning range is slightly reduced. However, at same low temperature the filter rejection improves by more than 20% (up to -25 dB). An accurate circuit T-model has been proposed and validated against S-parameter measurements and 3D EM full wave simulations. The fabricated devices are very robust and show highly reproducible characteristics at wafer level; the filter characteristics in air and vacuum are quasi-identical, probably due to AlN dielectric slow charging/fast discharging. Moreover, filter characteristics stay stable over three month of wafer storage in ambient conditions.

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Type
conference paper
DOI
10.1109/IEDM.2009.5424217
Web of Science ID

WOS:000279343900194

Author(s)
Fernandez-Bolanos, Montserrat
Lisec, Thomas
Dehollain, Catherine  
Tsamados, Dimitrios
Nicole, Pierre
Ionescu, Adrian M.  
Date Issued

2009

Publisher

IEEE

Publisher place

Piscataway, NJ

Published in
2009 IEEE International Electron Devices Meeting
ISBN of the book

978-1-4244-5640-6

Start page

753

End page

756

Subjects

Tunable filters

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Band-stop filters

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RF MEMS

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AlN

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e-CUBES

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AlN

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AlN RF MEM capacitive switches

•

AlN dielectric

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Ka-band frequencies

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Ku-band frequencies

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band-pass insertion loss

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central capacitive MEM switch

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circuit T-model

•

filter rejection

•

frequency 10 GHz

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frequency 13.5 GHz to 37 GHz

•

highly tunable band-stop filters

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inductive arms

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inductive suspension arms

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loss -0.19 dB

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loss -0.25 dB

•

miniature single MEM device

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suspended meander arm inductance

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temperature -100 C to 100 C

•

temperature measurements

•

wideband tunable band-stop filters

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zipping capacitive coupling

•

aluminium compounds

•

microswitches

•

microwave filters

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microwave switches

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millimetre wave filters

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notch filters

•

tuning

Note

Technical Digest - pages 33.6.1-33.6.4

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
SCI-STI-CD  
Event nameEvent placeEvent date
IEEE International Electron Devices Meeting (IEDM 2009)

Baltimore, MD

Dec 07-09, 2009

Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/76597
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